Aluminium gallium indium phosphide
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Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It spans a direct bandgap ranging from ultraviolet to infrared photon energies.[1]
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AlGaInP | |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers.